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Factors Influencing Reverse Recovery Time

• Circuit/Environment Influences
  
  • dl/dT
  • Junction Temperature
    
• Other Factors
  
  • Silicon Resistivity
  • Peak Inverse Voltage
  • Manufacturing Process

Circuit Effects
dl/dT - In general T_RR decreases as dl/dT increases. Rate of change varies with manufacturing process and speed of device. Typically, slower devices exhibit less change in T_RR as dl/dT changes. The following example reflects data taken from a high speed 1000V, 3Amp, platinum doped VMI power rectifier:

Slope of Reverse Current dl/dT (Amps/µs)

Environmental Effects
In general, T_RR increases with junction temperature. The rate of change varies with manufacturing processes and the speed of the devices. Higher speed devices of the same manufacturing process change more (% of RT T_RR) with temperature than slower devices. This graph reflects data taken from a range of VMI fast and ultra-fast diodes.

          Junction Temperature, T_j (°C)