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E-Zorb High Voltage High Reverse Power Diodes

Manufactured using VMI's Reverse Power Technology, E-Zorb diodes absorb up to 400mJ Reverse Avalanche Energy (Ersm) at 10kVrwm without damage.

Features include

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E-zorb^TM diodes can withstand higher than normal reverse power surges without permanently damaging the diode junction.

E-zorb^TMdiodes are useful in many applications ranging from noisy industrial environments to sensitive instrumentation applications.

VMI offers several combinations of reverse power, reverse voltage, forward current, and reverse recovery time.

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Last update: 02 Aug 2010