Many processes are used to manufacture high speed devices (e.g. platinum doping, gold doping,
irradiation, etc.). Each process results in a somewhat different diode behavior. VMI uses a platinum
diffusion technique to optimize the following characteristics:
a. Low Reverse Leakage--typically <1µA at rated voltage at 100°C junction temperature.
(Other processes may exhibit >1mA at rated voltage at room temperature).
b. Low High Temp Reverse Leakage-- typically <20µA at the rated voltage at 100°C
junction temperature. Thermal runaway due to reverse leakage is rarely seen on VMI devices
operated within rated parameters at temperatures of up to +175°C.
c. High Voltage-- VMI's platinum doping process provides high voltage break down
characteristics exceeded by no other manufacturer of similiar devices.
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